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| MITSUBISHI SEMICONDUCTOR TRIAC BCR20AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR20AM OUTLINE DRAWING Dimensions in mm 10.5 MAX. 4.5 16 MAX. 3.2 0.2 7.0 1.3 12.5 MIN. 3.6 TYPE NAME VOLTAGE CLASS 3.6 0.2 1.0 0.8 E 2.5 2.5 0.5 2.6 ................................................................ 20A q VDRM ...................................................... 400V / 600V q IFGT !, IRGT ! , IRGT # ................... 30mA (20mA) V5 q IT (RMS) T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220 APPLICATION Vacuum cleaner, light dimmer, copying machine, other control of motor and heater MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltageV1 Non-repetitive peak off-state voltageV1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I 2t PGM PG (AV) VGM IGM Tj Tstg -- Parameter RMS on-state current Surge on-state current I 2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Typical value Conditions Commercial frequency, sine full wave, Tc=105C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current 4.5 V Measurement point of case temperature Ratings 20 200 167 5 0.5 10 2 -40 ~ +125 -40 ~ +125 2.0 Unit A A A2s W W V A C C g Feb.1999 V1. Gate open. MITSUBISHI SEMICONDUCTOR TRIAC BCR20AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) (dv/dt)c Parameter Repetitive peak off-state current On-state voltage ! Test conditions Tj=125C, VDRM applied Tc=25C, ITM=30A, Instantaneous measurement @ # ! Limits Min. -- -- -- -- -- -- -- -- 0.2 -- V3 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 30 V5 30 V5 30 V5 -- 0.8 -- Unit mA V V V V mA mA mA V C/ W V/s Gate trigger voltageV2 Tj=25C, VD=6V, RL=6, RG=330 V3 Gate trigger current V2 @ # Tj=25C, VD=6V, RL=6, Tj=125C, VD=1/2VDRM Junction to case V4 RG=330 V3 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. V4. The contact thermal resistance Rth (c-f) in case of greasing is 1C/W. V5. High sensitivity (IGT 20mA) is also available. (IGT itme ) Voltage class VDRM (V) (dv/dt)c Symbol R Min. -- 10 V/s R -- 10 Unit Test conditions 1. Junction temperature Tj=125C 2. Rate of decay of on-atate commutating current (dv/dt)c=-10A/ms 3. Peak off-state voltage VD=400V Commutating voltage and current waveforms (inductive load) SUPPLY VOLTAGE (di/dt)c TIME TIME VD TIME 8 400 L MAIN CURRENT MAIN VOLTAGE (dv/dt)c 12 600 L PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS RATED SURGE ON-STATE CURRENT 200 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 Tj = 125C Tj = 25C 100 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR20AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 102 7 5 3 2 100 (%) GATE CHARACTERISTICS (, AND ) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 IRGT I GATE VOLTAGE (V) VGM = 10V PG(AV) = 0.5W PGM = 5W IGM = 2A 101 7 5 3 VGT = 1.5V 2 GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 102 7 5 3 2 IFGT I IRGT III 100 7 5 3 2 101 7 5 3 2 IFGT I , IRGT I , IRGT III VGD = 0.2V 10-1 1 10 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE (C/W) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7103 CONDUCTION TIME (CYCLES AT 60Hz) TYPICAL EXAMPLE GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 ON-STATE POWER DISSIPATION (W) 50 CASE TEMPERATURE (C) 16 20 24 28 32 360 CONDUCTION 40 RESISTIVE, INDUCTIVE LOADS 30 140 120 100 80 360 CONDUCTION 60 RESISTIVE, INDUCTIVE 40 LOADS 20 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) 20 10 0 0 4 8 12 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR20AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 AMBIENT TEMPERATURE (C) 140 120 100 80 60 40 20 0 0 AMBIENT TEMPERATURE (C) ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED NATURAL CONVECTION 160 160 t2.3 100 100 t2.3 60 60 t2.3 140 120 100 80 60 40 20 0 0 NATURAL CONVECTION NO FINS CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS 5 10 15 20 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) 105 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 7 5 3 2 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) TYPICAL EXAMPLE IH(typ) = 20mA 104 7 5 3 2 HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 102 7 5 4 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE 7 5 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 3 2 102 7 5 3 2 BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) 101 7 5 3 2 + T2 , G+ TYPICAL - T2 , G- EXAMPLE ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION 100 (%) 103 160 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT (mA) + T2 , G- TYPICAL EXAMPLE 100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR20AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 140 TYPICAL EXAMPLE Tj = 125C III QUADRANT COMMUTATION CHARACTERISTICS 102 7 MINIMUM 5 CHARAC3 TERISTICS 2 VALUE III QUADRANT BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 120 100 80 60 40 20 I QUADRANT 101 7 5 3 2 TYPICAL 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) EXAMPLE 100 Tj = 125C 7 I QUADRANT 5 IT = 4A = 500s 3 2 VD = 200V f = 3Hz -1 10 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 100 (%) 103 7 5 4 3 2 TYPICAL EXAMPLE GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 6V V A 330 6V V A 330 102 7 5 4 3 2 TEST PROCEDURE 6 TEST PROCEDURE 6V A V 330 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE TRIGGER PULSE WIDTH (s) TEST PROCEDURE Feb.1999 |
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